2sa1209 / 2sc2911 no.0779-1/5 features adoption of fbet process. high breakdown voltage. good linearity of h fe and small cob. fast switching time. specifications ( ) : 2sa1209 absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (- -)180 v collector-to-emitter voltage v ceo (- -)160 v emitter-to-base voltage v ebo (- -)5.0 v collector current i c (- -)140 ma collector current (pulse) i cp (- -)200 ma collector dissipation p c 1.0 w t c=25 c10w junction temperature tj 150 c storage temperature tstg - -55 to +150 c tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : en0779e 61307cb ti im tc-00000752 / 70502tn (kt) / 71598ha (kt) / d251mh / 5147ki / 3135ki / o193ki,ts specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. sanyo semiconductors d ata sheet 2sa1209 / 2sc2911 pnp / npn epitaxial planar silicon transistors 160v / 140ma high-voltage switching and af 100w predriver applications
2sa1209 / 2sc2911 no.0779-2/5 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)80v, i e =0a (--)0.1 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)0.1 a dc current gain h fe v ce =(--)5v, i c =(--)10ma 100* 400* gain-bandwidth product f t v ce =(--)10v, i c =(--)10ma 150 mhz output capacitance cob v cb =(--)10v, f=1mhz (4.0)3.0 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)50ma, i b =(--)5ma (- -0.14)0.07 (- -0.4)0.3 v t urn-on time t on see specified test circuit. 0.1 s storage time t stg see specified test circuit. 1.5 s fall time t f see specified test circuit. 0.1 s * : the 2sa1209/2sc2911 are classified by 10ma h fe as follows : rank r s t h fe 100 to 200 140 to 280 200 to 400 package dimensions switching time test circuit unit : mm (typ) 7515-002 collector-to-emitter voltage, v ce -- v i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- ma collector current, i c -- ma i c -- v ce itr03021 0- -10 --20 --30 --40 --50 --60 --70 0 10 20 30 40 50 60 70 0 - -20 - -40 - -60 - -80 - -100 - -120 - -140 0 20 40 60 80 100 120 140 itr03022 - -0.1ma - -0.2ma - -0.3ma - -0.4ma - -0.5ma - -0.6ma i b =0ma 2sa1209 2sc2911 0.1ma 0.2ma 0.3ma 0.4ma 0.6ma i b =0ma 0.5ma 8.0 4.0 1.6 0.8 0.6 0.8 7.0 3.0 1.5 11.0 15.5 0.5 2.7 123 3.0 4.8 1.2 2.4 1 : emitter 2 : collector 3 : base sanyo : to-126 in out 20v 50 ? 3k ? 5k ? 2k ? 1 f1 f -- 2 v i c =10i b1 =--10i b2 =10ma + + r b i b1 i b2 f or pnp, minus sign is omitted.
2sa1209 / 2sc2911 no.0779-3/5 10 100 collector-to-base voltage, v cb -- v cob -- v cb output capacitance, cob -- pf 10 100 collector-to-base voltage, v cb -- v output capacitance, cob -- pf gain-bandwidth product, f t -- mhz f t -- i c collector current, i c -- ma 10 100 cob -- v cb gain-bandwidth product, f t -- mhz f t -- i c collector current, i c -- ma 10 100 dc current gain, h fe h fe -- i c collector current, i c -- ma collector current, i c -- ma dc current gain, h fe h fe -- i c i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- ma base-to-emitter voltage, v be -- v collector current, i c -- ma i c -- v be 0 - -20 - -40 - -60 - -80 - -100 - -120 - -140 20 0 40 60 80 100 120 140 itr03024 itr03023 -- 0.4 -- 0.6 -- 0.8 -- 1.0 -- 0.2 0 0.4 0.6 0.8 1.0 0.2 0 2sa1209 2sc2911 itr03025 57 7 53 257 3 22 - -10 --100 - -1.0 1000 5 3 7 100 10 2 5 3 7 2 57 7 53 257 3 22 10 100 1.0 1000 5 3 7 100 10 2 5 3 7 2 itr03026 2sa1209 v ce =--5v 2sc2911 v ce =5v itr03028 100 10 3 2 3 2 5 7 itr03027 57 3 257 3 22 - -10 --100 - -1.0 100 10 3 2 3 2 5 7 57 3 257 3 22 10 100 1.0 2sc2911 v ce =10v 2sa1209 v ce =--10v itr03030 itr03029 23 57 7 5 - -10 - -1.0 --100 23 10 1.0 2 3 2 3 7 5 5 7 100 23 57 7 5 10 1.0 100 23 10 1.0 2 3 2 3 7 5 5 7 100 2sa1209 f=1mhz 2sc2911 f=1mhz
2sa1209 / 2sc2911 no.0779-4/5 0 0.2 0.4 0.6 0.8 1.0 1.2 20 060 40 80 100 140 120 160 p c -- ta itr03036 no heat sink a s o 2sa1209 / 2sc2911 p c -- tc collector-to-emitter voltage, v ce -- v collector current, i c -- ma ambient temperature, ta -- c collector dissipation, p c -- w case temperature, tc -- c collector dissipation, p c -- w collector current, i c -- ma v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- ma v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- v itr03032 itr03031 - -0.1 - -1.0 2 3 3 2 7 5 2 5 7 0.1 1.0 2 3 2 7 5 3 5 7 - -1.0 57 57 7 5 - -10 --100 22 32 3 1.0 57 57 7 5 10 100 22 32 3 2sc2911 i c / i b =10 2sa1209 i c / i b =10 itr03033 - -1.0 --10 57 - -100 7 222 3 35 7 5 1.0 10 57 100 7 222 3 35 7 5 itr03034 2sa1209 i c / i b =10 - -1.0 - -10 3 7 5 3 2 5 7 1.0 10 3 5 7 5 3 2 7 2sc2911 i c / i b =10 itr03035 10 100 7 23 5 7 23 5 23 5 10 2 3 5 7 100 2 3 5 2 3 5 7 1ms 1s dc operation i cp =200ma i c =140ma 02040608 0 100 120 160 140 itr03037 0 2 4 8 6 12 10 2sa1209 / 2sc2911 collector current, i c -- ma v be (sat) -- i c base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- ma v be (sat) -- i c base-to-emitter saturation voltage, v be (sat) -- v 2sa1209 / 2sc2911 dc single pulse for pnp, minus sign is omitted
2sa1209 / 2sc2911 no.0779-5/5 ps sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. this catalog provides information as of june, 2007. specifications and information herein are subject to change without notice.
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